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| BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data * For low noise, high gain controlled input stages up to 1GHz * Operating voltage 5V 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code Q62702-F1774 Pin Configuration 1=D 2=S 3 = G1 4 = G2 Package SOT-343 BF 2030W NEs Maximum Ratings Parameter Drain-source voltage Symbol Value 14 40 10 7 200 -55 ...+150 150 Unit V mA V mW C VDS ID I G1/2SM +VG1SE Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, T S = 94 C Storage temperature Channel temperature Ptot T stg T ch Thermal Resistance Channel - soldering point Rthchs 280 K/W Semiconductor Group Semiconductor Group 11 Jun-05-1998 1998-11-01 BF 2030W Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Drain-source breakdown voltage typ. 12 8.5 8.5 max. 50 50 12 0.8 0.7 - Unit V(BR)DS +V(BR)G1SS +V(BR)G2SS +I G1SS +I G2SS 0.3 0.3 V I D = 650 A, -V G1S = 4 V, - V G2S = 4 V Gate 1 - source breakdown voltage +I G1S = 10 mA, V G2S = 0 V, V DS = 0 V Gate 2 - source breakdown voltage I G2S = 10 mA, V G1S = V DS = 0 Gate 1 source current V nA VG1S = 5 V, V G2S = 0 V Gate 2 source leakage current VG2S = 5 V, V G1S = 0 V, V DS = 0 V Drain current I DSS I DSX VG2S(p) VG1S(p) A mA V VDS = 5 V, V G1S = 0 V, VG2S = 4 V Drain-source current VDS = 5 V, V G2S = 4 V, RG1 = 20 k Gate 2-source pinch-off voltage VDS = 5 V, ID = 20 A Gate 1-source pinch-off voltage VDS = 5 V, V G2S = 4 V, I D = 20 A AC characteristics Forward transconductance g fs Cg1ss - 31 2.5 - mS pF VDS = 5 V, ID = 10 mA, V G2S = 4 V Gate 1 input capacitance VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz Output capacitance Cdss - 1.1 - VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz Noise figure F - 2 - dB VDS = 5 V, ID = 10 mA, f = 800 MHz Semiconductor Group Semiconductor Group 22 Jun-05-1998 1998-11-01 |
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